Effects of piezoelectric fields in GaInN/GaN and GaN/AlGaN heterostructures and quantum wells

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 513-518

  Im, Jin Seo ^a   Kollmer, H ^a   Off, J ^a   Sohmer, A ^a   Scholz, F ^a   Hangleiter, A ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; HETEROJUNCTIONS; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

LUMINESCENCE DECAY TIMES;

SEMICONDUCTOR JUNCTIONS;

EID: 0031348864     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-513     Document Type: Conference Paper

References (10)