Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 132-142

  Davis, Robert F ^a   Tanaka, S ^a,b   Rowland, L B ^a,c   Kern, R S ^a,d   Sitar, Z ^a   Ailey, S K ^a   Wang, C ^a  

^a North Carolina State University   (United States)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c Northrup Grumman Res Laboratories   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CHARACTERIZATION; COALESCENCE; DEPOSITION; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; SURFACE STRUCTURE;

ADATOMS; ALUMINUM NITRIDE; GAS FLOW RATIOS; GAS SOURCE MOLECULAR BEAM EPITAXY; ISLANDS; MISALIGNMENT; STEP BUNCHING; STEP FLOW; SURFACE RECONSTRUCTION;

THIN FILMS;

EID: 0030189473     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01023-8     Document Type: Article

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