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Volumn 69, Issue 19, 1996, Pages 2879-2881

Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000217798     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117349     Document Type: Article
Times cited : (62)

References (15)
  • 8
    • 5544326256 scopus 로고
    • edited by S. G. Davison Pergammon, New York
    • L. A. Petermann, in Progress in Surface Science, edited by S. G. Davison (Pergammon, New York, 1973), Vol. 3, p. 12.
    • (1973) Progress in Surface Science , vol.3 , pp. 12
    • Petermann, L.A.1
  • 11
    • 85033863002 scopus 로고    scopus 로고
    • note
    • The active nitrogen flux was approximately estimated by increasing the Ga flux during GaN growth, for a fixed nitrogen flux and discharge condition. When the Ga flux (which is known) exceeds a certain threshold value, the reflection high energy electron diffraction (RHEED) pattern corresponding to the GaN (0001) surface becomes very dim due to Ga accumulation on the surface. At this crossover point, the Ga flux is equated to the active nitrogen flux.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.