Metallorganic vapor-phase-epitaxial growth of GaInN/GaN heterostructures and quantum wells

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 3-14

  Scholz, F ^a   Harle, V ^a   Steuber, F ^a   Sohmer, A ^a   Bolay, H ^a   Syganow, V ^a   Dornen, A ^a   Im, J S ^a   Hangleiter, A ^a   Duboz, J Y ^a   Galtier, P ^a   Rosencher, E ^a   Ambacher, O ^a   Brunner, D ^a   Lakner, U ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; MICROSCOPIC EXAMINATION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030685563     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (28)