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Applied Physics Letters

Volumn 70, Issue 17, 1997, Pages 2282-2284

Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

(5) Van Hove, J M a Hickman, R a Klaassen, J J a Chow, P P a Ruden, P P b

a SVT ASSOCIATES (United States)

b UNIVERSITY OF MINNESOTA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS; ULTRAVIOLET RADIATION;

GALLIUM NITRIDE; PHOTOCURRENTS; PHOTOVOLTAIC DIODE STRUCTURE;

PHOTODIODES;

EID: 0031120767 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.118838 Document Type: Article

Times cited : (165)

References (12)

1
- 0030270947
- M. N. Yoder, IEEE Trans. Electron Devices 43, 1633 (1996).
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1633
- Yoder, M.N.¹

2
- 0029388336
- S. N. Mohammad, A. A. Salvador, and H. Morkoc, Proc. IEEE 83, 1306 (1995).
- (1995) Proc. IEEE , vol.83 , pp. 1306
- Mohammad, S.N.¹ Salvador, A.A.² Morkoc, H.³

3
- 21544461610
- H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76. 1363 (1994).
- (1994) J. Appl. Phys. , vol.76 , pp. 1363
- Morkoc, H.¹ Strite, S.² Gao, G.B.³ Lin, M.E.⁴ Sverdlov, B.⁵ Burns, M.⁶

4
- 21544463523
- M. A. Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, and L. F. Reitz, Appl. Phys. Lett. 60, 2917 (1992).
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2917
- Khan, M.A.¹ Kuznia, J.N.² Olson, D.T.³ Van Hove, J.M.⁴ Blasingame, M.⁵ Reitz, L.F.⁶

5
- 21544470376
- M. A. Khan, J. N. Kuznia, D. T. Olson, M. Blasingame, and A. R. Bhattarai, Appl. Phys. Lett. 63, 2455 (1993).
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2455
- Khan, M.A.¹ Kuznia, J.N.² Olson, D.T.³ Blasingame, M.⁴ Bhattarai, A.R.⁵

6
- 0029369545
- Q. Chen, M. A. Khan, C. J. Sun, and J. W. Yang, Electron. Lett. 31, 1781 (1995).
- (1995) Electron. Lett. , vol.31 , pp. 1781
- Chen, Q.¹ Khan, M.A.² Sun, C.J.³ Yang, J.W.⁴

7
- 36449006331
- X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, and M. Razeghi, Appl. Phys. Lett. 67, 2028 (1995).
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2028
- Zhang, X.¹ Kung, P.² Walker, D.³ Piotrowski, J.⁴ Rogalski, A.⁵ Saxler, A.⁶ Razeghi, M.⁷

8
- 6144261628
- M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).
- (1996) J. Appl. Phys. , vol.79 , pp. 7433
- Razeghi, M.¹ Rogalski, A.²

9
- 0029309760
- J. M. Van Hove, G. J. Cosimini, E. Nelson, A. M. Wowchak, and P. P. Chow, J. Cryst. Growth 150, 908 (1995).
- (1995) J. Cryst. Growth , vol.150 , pp. 908
- Van Hove, J.M.¹ Cosimini, G.J.² Nelson, E.³ Wowchak, A.M.⁴ Chow, P.P.⁵

10
- 0345768120
- M. A. Smith, V. J. Kapoor, R. Hickman, and J. Van Hove, Electrochem. Soc. Symp. Proc. 96-11, 133 (1996).
- (1996) Electrochem. Soc. Symp. Proc. , vol.96 , Issue.11 , pp. 133
- Smith, M.A.¹ Kapoor, V.J.² Hickman, R.³ Van Hove, J.⁴

11
- 0004279269
- Wiley, New York
- T. S. Moss, G. J. Burrell, and B. Ellis, Semiconductor Optoelectronics (Wiley, New York, 1973).
- (1973) Semiconductor Optoelectronics
- Moss, T.S.¹ Burrell, G.J.² Ellis, B.³

12
- 85033307757
- R. Wang, P. P. Ruden, J. Kolnik, I. Oguzman, and K. F. Brennan, J. Phys. Chem. Solids (in press).
- J. Phys. Chem. Solids (in Press)
- Wang, R.¹ Ruden, P.P.² Kolnik, J.³ Oguzman, I.⁴ Brennan, K.F.⁵

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