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Volumn 71, Issue 23, 1997, Pages 3385-3387

Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0343241116     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120343     Document Type: Article
Times cited : (93)

References (13)
  • 1
    • 5844286035 scopus 로고    scopus 로고
    • Progress and Prospects of Group-III Nitride Semiconductors
    • Chiba University, Japan, March 5-7
    • H. Morkoç "Progress and Prospects of Group-III Nitride Semiconductors," International Symposium on Blue Lasers and Light Emitting Diodes, Chiba University, Japan, March 5-7, 1996, pp. 23-29.
    • (1996) International Symposium on Blue Lasers and Light Emitting Diodes , pp. 23-29
    • Morkoç, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.