Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 290-292

  Wu, Y F ^b   Keller, S ^b   Kozodoy, P ^b   Keller, B P ^b   Parikh, P ^b   Kapolnel, D ^b   Denbaars, S P ^a,b   Mishra, U K ^a,b  

^a IEEE

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CUTOFF FREQUENCIES; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

GATES (TRANSISTOR);

EID: 0031168043     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585362     Document Type: Article

References (8)

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