Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates

Applied Physics Letters

Volumn 72, Issue 6, 1998, Pages 707-709

  Gaska, R ^a   Yang, J W ^a   Osinsky, A ^a   Chen, Q ^a   Khan, M Asif ^a   Orlov, A O ^b   Snider, G L ^b   Shur, M S ^c  

^a APA Optronics   (United States)

^b University of Notre Dame   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000703134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120852     Document Type: Article

References (20)

1. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, Appl. Phys. Lett. 26, 625 (1976).
2. B. Gelmont, K. S. Kim, and M. Shur, J. Appl. Phys. 74, 1818 (1993).
3. M. Shur, B. Gelmont, C. Saavedra-Munoz, and G. Kelner, in Proceedings of the 5th Conference on Silicon Carbide and Related Compounds (Institute of Physics Publishing, Bristol, 1994), Ser. No. 137, p. 465.
4. R. P. Joshi and P. K. Raha, in Proceedings of the 5th Conference on Silicon Carbide and Related Compounds (Institute of Physics Publishing, Bristol, 1994), Ser. No. 137, p. 687.
5. M. S. Shur, B. Gelmont, and M. Asif Khan, J. Electron. Mater. 25, 777 (1996).
6. U. V. Bhapkar and M. S. Shur, J. Appl. Phys. 82, 1655 (1997).
7. M. S. Shur, B. Gelmont, and M. Asif Khan, J. Electron. Mater. 25, 777 (1995).
8. W. Knap, S. Contreras, H. Alause, C. Skierbiszewski, J. Camassel, M. Dyakonov, J. Yang, Q. Chen, M. Asif Khan, M. L. Sadowski, S. Huant, F. H. Yang, M. Goiran, J. Leotin, and M. S. Shur, Appl. Phys. Lett. 70, 2123 (1996).
9. C. F. Lin, H. C. Cheng, J. A. Huang, M. S. Feng, J. D. Guo, and G. C. Chi, Appl. Phys. Lett. 70, 2583 (1997).
10. R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and M. S. Shur, IEEE Electron Device Lett. 18, 492 (1997).
11. Q. Chen, R. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, and L. F. Eastman, Electron. Lett. 33, 637 (1997).
12. P. M. Asbeck, G. J. Sullivan, E. T. Yu, S. S. Lau, and B. McDermott, DRC'97, Fort-Collins, CO, 1997, p. VB5.
13. R. Gaska, J. Yang, A. Osinsky, A. Bykhovski, and M. S. Shur, Appl. Phys. Lett. 72, 64 (1998).
14. B. Gelmont and M. S. Shur, J. Appl. Phys. 78, 2846 (1995).
15. R. Gaska, J. Yang, A. Osinsky, M. Asif Khan, and M. S. Shur (unpublished).
16. S. D. Hersee, J. C. Ramer, and K. J. Malloy, MRS Bull. 22, 45 (1996).
17. R. Gaska, J. W. Yang, A. Osinsky, A. Bykhovski, M. S. Shur, V. V. Kaminski, and S. Soloviov, Appl. Phys. Lett. 71, 3817 (1997).
18. B. P. Pödör, Phys. Status Solidi 16, K167 (1966).
19. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. Denbaars, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996).
20. C. H. Seager, Annu. Rev. Mater. Sci. 15, 271 (1985).