High performance GaN/AlGaN MODFETs grown by RF-assisted MBE

Electronics Letters

Volumn 34, Issue 3, 1998, Pages 309-311

  Nguyen, C ^a   Nguyen, N X ^a   Le, M ^a   Grider, D E ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

SMALL SIGNAL MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032484855     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980198     Document Type: Article

References (8)

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2. T and 1.7W/mm output power at 10GHz', IEEE Electron Device Lett., 1997, 18, pp. 438-440
3. EASTMAN, L., CHU, K., SCHAFF, W., MURPHY, M., WEINMANN, N., and EUSTIS, T.: 'High frequency AlGaN/GaN MODFETs', MRS Internet J. Nitride Semicond. Research, 1997, 2,
4. PING, A.T., KHAN, M.A., CHEN, Q., YANG, J.W., and ADESIDA, I.: 'Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs', Electron. Lett., 1997, 33, pp. 1081-1083
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6. FAN, Z., LU, C., BOTCHKAREV, A.E., TANG, H., SALVADOR, A., AKTAS, O., and MORKOC, H.: 'AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)', Electron. Lett., 1997, 33, pp. 814-815
7. WU, Y.F., KELLER, B., KELLER, S., FINI, P., MISHRA, U., LE, M., NGUYEN, N.X., NGUYEN, C., WIDMAN, D., KELLER, S., and MISHRA, U.: 'Short-channel AlGaN/GaN MODFETs with power density > 3 W/ mm at 18GHz', Electron. Lett., 1997, 33, pp. 1742-1744
8. max and >100V gate-drain breakdown voltage', Electron. Lett., 1997, 33, pp. 334-335