High quality InP on Si by conformal growth

Applied Physics Letters

Volumn 68, Issue 19, 1996, Pages 2654-2656

  Parillaud, O ^a   Gil Lafon, E ^a   Gerard B ^b   Etienne, P ^b   Pribat, D ^b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000771640     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116271     Document Type: Article

References (6)

1. S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, J. Appl. Phys. AIP 68, 31 (1990).
2. A number of papers on this subject have been published in Mater. Res. Soc. Symp. Proc. Vols. 67, 91, 116, and 198.
3. D. Pribat, B. Gérard, M. Dupuy, and P. Legagneux, Appl. Phys. Lett. AIP 60, 2144 (1992).
4. B. Gérard, D. Pribat, R. Bisaro, E. Costard, J. Nagle, J. Ricciardi, and M. Dupuy, Mater. Res. Soc. Symp. Proc. INS 280, 675 (1993).
5. J. Theeten, L. Hollan, and R. Cadoret, in 1976 Crystal Growth and Materials, edited by E. Kaldis and H. J. Scheel (North Holland, Amsterdam, 1977), p. 195.
6. A. Huber and N. T. Linh, J. Cryst. Growth INS 29, 80 (1975).