Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates

Applied Physics Letters

Volumn 68, Issue 19, 1996, Pages 2705-2707

  Li, Wei ^a   Ni, Wei Xin ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001183518     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116315     Document Type: Article

References (8)

1. S. Trite, M. E. Lin, and H. Morkoç, Thin Solid Films INS 231, 197
2. M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. AIP 63, 1214 (1993).
3. B. Monemar, J. P. Bergman, I. A. Buyanova, H. Amoano, and I. Akasaki, 1995 Workshop on III-Nitride Materials, Japan.
4. T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki, Jpn. J. Appl. Phys. INS 31, L1454 (1992).
5. R. J. Hauenstein, B. M. Clemens, R. H. Miller, O. J. Marsh, E. T. Croke, and T. C. McGill, J. Vac. Sci. Technol. B AIP 7, 767 (1989).
6. P. F. Fewster, Semicond. Sci. Technol. INS 8, 1915 (1993).
7. P. F. Fewster and N. L. Andrew, J. Appl. Phys. AIP 74, 3121 (1993).
8. H. Heinke, M. O. Möller, D. Hommel, and G. Landwehr, J. Cryst. Growth INS 135, 41 (1994).