Electron mobility in two-dimensional electron gas in AlGaN/GaN heterostructures and in bulk GaN

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 777-785

  Shur, M ^a   Gelmont, B ^a   Khan, M Asif ^b  

^a University of Virginia   (United States)

^b APA Optronics   (United States)

Author keywords

Gallium nitride; Hall factor; Heterostructure; Mobility; Two dimensional electron gas (2DEG)

Indexed keywords

EID: 5244278122     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666636     Document Type: Article

References (25)

1. M.A. Littlejohn, J.R. Hauser and T. H. Glisson, Appl. Phys. Lett. 26, 625 (1976).
2. B. Gelmont, K.S. Kim and M. Shur, J. Appl. Phys. 74, 1818 (1993).
3. M. Shur, B. Gelmont, C. Saavedra-Munoz and G. Kelner, Proc. 5th Conf. Silicon Carbide and Related Compounds, 137 (Bristol and Philadelphia: Institute of Physics Publishing, 1994), p. 465.
4. R.P. Joshi and P.K. Raha, Proc. 5th Conf. Silicon Carbide and Related Compounds, 137 (Bristol and Philadelphia: Institute of Physics Publishing, 1994), p. 687.
5. V.W.L. Chin, T.L. Tansley and T. Osotchan, J. Appl. Phys. 75, 7365 June (1994).
6. D.L. Rode and D.K. Gaskill, Appl. Phys. Lett. 66, 1972 (1995).
7. J.G. Kim, A.C. Frenkel, H. Liu and R.M. Park, Appl. Phys. Lett. 65, 91 (1994).
8. M. Shur and M. A. Khan, Proc. Optoelectronic Materials, Devices, and Integrated Circuits, SPIE-WEST, Feb. 7 (1995), to be published.
9. B. Vinter and T. Weil, Superlatt. Microstruct. 3, 481 (1987).
10. B. Gelmont, M. Shur and M. Stroscio, J. Appl. Phys. 77, 657, Jan. (1995).
11. B. Gelmont, B. Lund, K.-S. Kim, G.U. Jensen, M.S. Shur and T.A. Fjeldly, J. Appl. Phys. 71, (10), 4977, May 15 (1992).
12. J.S. Blakemore, Solid State Electron. 25, 1067 (1982).
13. A.I. Anselm, Introduction to Physics of Semiconductors, MIR (1987).
14. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, (4), 1237 (1992).
15. B.K. Ridley, Quantum Processes in Semiconductors, (New York: Oxford University Press, 1982).
16. A. Bykhovski, B. Gelmont, M.S. Shur and A. Khan, J. Appl. Phys. 76, Feb. 15, 1616 (1995).
17. M. Shur, Physics of Semiconductor Devices, (New Jersey: Prentice Hall, 1990), p. 132.
18. B.Gelmont and M. Shur, J. Appl. Phys. 78 (4), 2846 (1995).
19. D.K. Gaskill, K. Doverspike, L.B. Rowland and D.L. Rode, 21st Intl. Symp, on Compound Semiconductors, Vol. 141, September 18-22 1994, San Diego, (Institute of Physics, Conference Series, 1995), p. 425.
20. M. Asif Khan, Q. Chen, C.J. Sun, M.S. Shur and B.L. Gelmont, Appl. Phys. Lett. 67, (10), Sep. 4, 1429 (1995).
21. U. Mishra, Private communication, June 21 (1995).
22. M. Fanciulli, T. Lei and T.D. Moustakas, Phys. Rev. B 48, 15144 (1993).
23. L. Eastman, presented at the Rump Session on Wide Band Gap Semiconductors, Device Research Conference, June 20 (1995).
24. M.A. Khan, Q. Chen, C.J. Sun, M.S. Shur, M.F. Macmillan, R.P. Devaty and J. Choyke, Proc. Optoelectronic Materials, Devices, and Integrated Circuits, SPIE-WEST, presented on Feb. 7 (1995), to be published.
25. M.A. Khan, M.S. Shur, J.N. Kuznia, J. Burm and W. Schaff, Appl. Phys. Lett. 66, (9), 1083 27 Feb. (1995).