Electron mobility in two-dimensional electron gas in AlGaN/GaN heterostructures and in bulk GaN

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 777-785

  Shur, M ^a   Gelmont, B ^a   Khan, M Asif ^b  

^a University of Virginia ^*  (United States)

^b APA Optronics   (United States)

Author keywords

Gallium nitride; Hall factor; Heterostructure; Mobility; Two dimensional electron gas (2DEG)

Indexed keywords

EID: 5244278122     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666636     Document Type: Article

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