High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant

Applied Physics Letters

Volumn 69, Issue 18, 1996, Pages 2707-2709

  Brandt, Oliver ^a   Yang, Hui ^a,b   Kostial, Helmar ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRON SCATTERING; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

COULOMB SCATTERERS; GALLIUM NITRIDE; HALL MEASUREMENT; HOLE MOBILITY; REACTIVE CODOPING;

SEMICONDUCTING FILMS;

EID: 0030260130     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117685     Document Type: Article

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