Self-heating in high-power AlGaN-GaN HFET's

IEEE Electron Device Letters

Volumn 19, Issue 3, 1998, Pages 89-91

  Gaska, R ^a   Osinsky, A ^a   Yang, J W ^a   Shur, M S ^b  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HEAT LOSSES; HEATING; HETEROJUNCTIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THERMODYNAMIC PROPERTIES;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HETEROJUNCTION FIELD EFFECT TRANSISTORS; SELF HEATING;

FIELD EFFECT TRANSISTORS;

EID: 0032023712     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.661174     Document Type: Article

References (10)

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