Hydrogen in gallium nitride grown by MOCVD

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages 105-119

  Ambacher, O ^a   Angerer, H ^a   Dimitrov, R ^a   Rieger, W ^a   Stutzmann, M ^a   Dollinger, G ^b   Bergmaier, A ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARBON; CRYSTAL DEFECTS; DEUTERIUM; FILM GROWTH; HYDROGEN; MAGNESIUM; MASS SPECTROMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; SAPPHIRE; THIN FILMS;

ELASTIC RECOIL DETECTION ANALYSIS; GALLIUM NITRIDE; STRUCTURAL PROPERTIES; THERMAL DESORPTION MEASUREMENT; TRIETHYLGALLIUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030705339     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199701)159:1<105::AID-PSSA105>3.0.CO;2-H     Document Type: Article

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