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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 3 A, 1996, Pages

Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire

(8) Keller, Stacia a Kapolnek, David a Keller, Bernd P a Wu, Yifeng a Heying, Benjamin a Speck, James S a Mishra, Umesh K a Denbaars, Steven P a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

AFM; GaN; Heteroepitaxy; MOCVD; Sapphire substrate

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; HETEROEPITAXY; TRIMETHYLGALLIUM FLOW;

SEMICONDUCTING FILMS;

EID: 0030109381 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.l285 Document Type: Article

Times cited : (42)

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