Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Applied Physics Letters

Volumn 72, Issue 13, 1998, Pages 1539-1541

  Kneissl, M ^a   Bour, D P ^a   Johnson, N M ^a   Romano, L T ^a   Krusor, B S ^a   Donaldson, R ^a   Walker, J ^a   Dunnrowicz, C ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; HETEROJUNCTIONS; ION BEAMS; LASER BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS;

ALUMINUM GALLIUM INDIUM NITRIDE; CHEMICALLY ASSISTED ION BEAM ETCHING; ROOT MEAN SQUARE;

SEMICONDUCTOR LASERS;

EID: 0032023478     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120575     Document Type: Article

References (13)

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