MBE growth of (In)GaN for led applications

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 149-159

  Riechert, H ^a   Averbeck, R ^a   Graber, A ^a   Schienle, M ^a   Straus, U ^a   Tews, H ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMITTING DIODES; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS;

GALLIUM NITRIDE;

MOLECULAR BEAM EPITAXY;

EID: 0030644705     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)