Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 68, Issue 8, 1996, Pages 1129-1131

  Sun, C J ^a   Yang, J W ^a   Chen, Q ^a   Asif Khan, M ^a   George, T ^b   Chang Chien, P ^b   Mahajan, S ^c  

^a APA Optronics   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040019963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115735     Document Type: Article

References (7)

1. S. Nakamura, M. Senoh, and T. Mukai, Appl. Phys. Lett. 62, 2390 (1993).
2. M. A. Khan, J. M. Van Hove, D. T. Olson, and J. N. Kuznia, Appl. Phys. Lett. 58, 1515 (1991).
3. H. Amano, T. Asahi, M. Kito, and I. Akasaki, J. Lumin. 48&49, 889 (1991).
4. J. N. Kuznia, J. W. Wang, Q. Chen, S. Krishnankutty, M. Asif Khan, T. George, and J. Freitas, Jr., Appl. Phys. Lett. 65, 2407 (1994).
5. S. Strite, J. Ruan, Z. Li, N. Manning, A. Salvador, H. Chen, D. J. Smith, W. J. Choyke, and H. Morkoc, J. Vac. Sci. Technol. B 9, 1924 (1991).
6. T. Lei, M. Fanciulli, R. J. Molnar, T. D. Moustakas, R. J. Graham, and J. Scanlon, Appl. Phys. Lett. 59, 944 (1991).
7. R. C. Powell, G. A. Tomasch, Y. W. Kim, J. A. Thornton, and J. E. Greene, Mater. Res. Soc. Symp. Proc. 162, 525 (1990).