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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy

(6) Kuramata, Akito a Domen, Kay a Soejima, Reiko a Horino, Kazuhiko a Kubota, Shin Ichi a Tanahashi, Toshiyuki a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

GaN; InGaN; Laser diode; Low pressure metal organic vapor phase epitaxy; Multiple quantum well; SiC

Indexed keywords

CRYSTAL ORIENTATION; CURRENT DENSITY; HYDROGEN; LASER PULSES; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OSCILLATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

FULL WIDTH AT HALF MAXIMUM (FWHM);

QUANTUM WELL LASERS;

EID: 0031223360 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.l1130 Document Type: Article

Times cited : (106)

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