A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 235-237

  Guo, J D ^a   Lin, C I ^a   Feng, M S ^a   Pan, F M ^b   Chi, G C ^c   Lee, C T ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001616329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116471     Document Type: Article

References (13)

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