Comparison of high field electron transport in GaN and GaAs

Applied Physics Letters

Volumn 70, Issue 21, 1997, Pages 2849-2851

  Foutz, B E ^a   Eastman, L F ^a   Bhapkar, U V ^b,c   Shur, M S ^b,d  

^a Department of Population Medicine and Diagnostic Sciences   (United States)

^b University of Virginia ^*  (United States)

^c NAVAL SURFACE WARFARE CENTER   (United States)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001546079     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119021     Document Type: Review

References (10)

1. S. N. Mohammad, A. A. Salvador, and H. Morkoc, Proc. IEEE 83, 1306 (1995).
2. M. A. Khan, Q. Chen, J. W. Yang, M. S. Shur, B. T. Dermott, and J. A. Higgins. IEEE Electron Device Lett. 17, 354 (1996).
3. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, Electron. Lett. 32, 357 (1996).
4. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, IEEE Electron Device Lett. 17, 584 (1996).
5. J. Kolnik, I. H. Oguzman, K. F. Brennan, R. Wang, P. P. Ruden, and Y. Wang, J. Appl. Phys. 78, 1033 (1995).
6. B. Gelmont, K. Kim, and M. Shur. J. Appl. Phys. 74, 1818 (1993).
7. P. Lugli and D. K. Ferry, IEEE Trans. Electron Devices 32, 2431 (1985).
8. B. Camez, A. Cappy, A. Kaszinski, E. Constant, and G. Salmer, J. Appl. Phys. 51, 784 (1980).
9. A. Cappy, B. Carnez, R. Fauquembergues, G. Salmer, and E. Constant, IEEE Trans. Electron Devices 27, 2158 (1980).
10. H. Morkoc, H. Unlu, and G. Ji, Principles and Technology of MODFETs (Wiley, Chichester, England, 1991), Vol. 2, p. 368.