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Volumn 449, Issue , 1997, Pages 233-238
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Doping studies of n- and p-type AlxGa1-xN grown by ECR-assisted MBE
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CONDUCTIVITY OF SOLIDS;
HALL EFFECT;
MOLECULAR BEAM EPITAXY;
NITRIDES;
PLASMA APPLICATIONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM COMPOUNDS;
THERMOELECTRICITY;
PLASMA ASSISTED MOLECULAR BEAM EPITAXY;
SEMICONDUCTOR DOPING;
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EID: 0030716587
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (20)
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References (10)
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