Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 357-358

  Khan, M A ^a   Chen, Q ^a   Shur, M S ^a   Dermott, B T ^a   Higgins, J A ^a   Burm, J ^a   Schaff, W ^a   Eastman, L F ^a  

^a APA Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); MICROWAVES; NATURAL FREQUENCIES; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CUTOFF FREQUENCY; DECREASED CONTACT; GALLIUM NITRIDE; GATE VOLTAGE SWING; SOURCE SERIES RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0030084279     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960206     Document Type: Article

References (8)