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Volumn 37, Issue 1, 1998, Pages 84-89

Quantitative transmission electron microscopy investigation of the relaxation by misfit dislocations confined at the interface of GaN/Al2O3(0001)

Author keywords

Al2O3; Confinement; GaN; Misfit dislocations; Relaxation; Residual strain; TEM

Indexed keywords

ALUMINA; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOIRE FRINGES; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0031647543     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.84     Document Type: Article
Times cited : (45)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.