Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 18, 1996, Pages 2722-2724

  Myoung, J M ^a   Shim, K H ^a   Kim, C ^a   Gluschenkov, O ^a   Kim, K ^a   Kim, S ^a   Turnbull, D A ^a   Bishop, S G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON BEAMS; MAGNESIUM; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES;

GALLIUM NITRIDE; LASER POWER DENSITY; LINE SHAPE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030260092     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117690     Document Type: Article

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