Molecular beam epitaxy growth and properties of GaN, AlxGa1-xN, and AlN on GaN/SiC substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2349-2353

  Johnson, M A L ^a   Fujita, Shizuo ^a,c   Rowland Jr , W H ^a   Bowers, K A ^a,d   Hughes, W C ^a   He, Y W ^a   El Masry, N A ^a   Cook Jr , J W ^a   Schetzina, J F ^a   Ren, J ^b   Edmond, J A ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c KYOTO UNIVERSITY   (Japan)

^d University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5544292876     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588858     Document Type: Article

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