ScAlMgO4: an oxide substrate for GaN epitaxy

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 51-54

  Hellman, E S ^a   Brandle, C D ^a   Schneemeyer, L F ^a   Wiesmann, D ^a   Brener, I ^a   Siegrist, T ^a   Berkstresser, G W ^a   Buchanan, D N E ^a   Hartford Jr , E H ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; MELTING; MOLECULAR BEAM EPITAXY; NITRIDES; OXIDES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THERMAL EXPANSION; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; NITROGEN PLASMA MOLECULAR BEAM EPITAXY; OXIDE SUBSTRATE; THERMAL EXPANSION MEASUREMENTS; WURZITIC GALLIUM NITRIDE;

SCANDIUM COMPOUNDS;

EID: 0029746384     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)