Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 367-369

  Zhang, L ^a   Ramer, J ^a   Brown, J ^a   Zheng, K ^a   Lester, L F ^a   Hersee, S D ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DEFECTS; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; MORPHOLOGY; PLASMA ETCHING; PRESSURE EFFECTS; SILICON COMPOUNDS; SURFACES; X RAY DIFFRACTION;

DC SELF BIAS; DEFECT DENSITY; GALLIUM NITRIDE; MATERIAL QUALITY; SILICON TETRACHLORIDE; X RAY DIFFRACTION ROCKING CURVE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029752626     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116718     Document Type: Article

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