Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 983-990

  Hamdani, F ^a   Yeadon, M ^a   Smith, David J ^b   Tang, H ^a   Kim, W ^a   Salvador, A ^a   Botchkarev, A E ^a   Gibson, J M ^a   Polyakov, A Y ^c   Skowronski, M ^c   Morkoc H ^a,d  

^a University of Illinois at Urbana Champaign   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM NITRIDE; LINEAR POLARIZED REFLECTIVITY; THERMAL STRAIN;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031699472     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366786     Document Type: Article

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