Short channel AlGaN/GaN MODFET's with 50-GHz fT and 1.7-W/mm output-power at 10 GHz

IEEE Electron Device Letters

Volumn 18, Issue 9, 1997, Pages 438-440

  Wu, Y F ^b   Keller, B P ^b   Keller, S ^b   Nguyen, N X ^a,c   Le, M ^c   Nguyen, C ^c   Jenkins, T J ^a,d   Kehias, L T ^e   Denbaars, S P ^b   Mishra, U K ^a,b  

^a IEEE

^b University of California   (United States)

^c Hughes Aircraft Co   (United States)

^d WRIGHT STATE UNIVERSITY   (United States)

^e AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

HIGH CHANNEL SATURATION CURRENT; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0031237591     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622522     Document Type: Article

References (16)

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