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Volumn 449, Issue , 1997, Pages 89-94
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Composition pulling effect in InGaN growth on the GaN and AlGaN epitaxial layers grown by MOVPE
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
INTERFACES (MATERIALS);
MULTILAYERS;
NITRIDES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
COMPOSITION PULLING EFFECT;
GALLIUM NITRIDE;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030646071
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (43)
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References (6)
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