Structural defects in heteroepitaxial and homoepitaxial GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 351-362

  Liliental Weber, Zuzanna ^a   Ruvimov, S ^a   Kisielowski, Ch ^a   Chen, Y ^a   Swider, W ^a   Washburn, J ^a   Newman, N ^a   Gassmann, A ^a   Liu, X ^a   Schloss, L ^a   Weber, E R ^a   Grzegory, I ^a   Bockowski, M ^a   Jun, J ^a   Suski, T ^a   et al , ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BUFFER LAYER; CRYSTAL POLARITY; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; HETEROEPITAXIAL GALLIUM NITRIDE; HOMOEPITAXIAL GALLIUM NITRIDE; YELLOW LUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029771078     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)