Ab initio study of oxygen point defects in GaAs, GaN, and AlN

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 23, 1996, Pages 16676-16682

  Mattila, T ^a   Nieminen, R ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001666951     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.16676     Document Type: Article

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