Electronics based on two-dimensional materials

Nature Nanotechnology

Volumn 9, Issue 10, 2014, Pages 768-779

  Fiori, Gianluca ^a   Bonaccorso, Francesco ^b   Iannaccone, Giuseppe ^a   Palacios, Tomás ^c   Neumaier, Daniel ^d   Seabaugh, Alan ^e   Banerjee, Sanjay K ^f   Colombo, Luigi ^g  

^a UNIVERSITY OF PISA   (Italy)

^b ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^c Massachusetts Institute of Technology   (United States)

^d AMO GMBH   (Germany)

^e University of Notre Dame   (United States)

^f The University of Texas at Austin   (United States)

^g TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC SWITCHES; FLEXIBLE ELECTRONICS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS;

ANALOG APPLICATIONS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRONIC DEVICE; ELECTRONIC SYSTEMS; INDUSTRY REQUIREMENTS; LOWER-POWER CONSUMPTION; PERFORMANCE LIMITS; TWO-DIMENSIONAL MATERIALS;

ELECTRONICS INDUSTRY;

ALKALI METAL; GRAPHENE; METAL OXIDE;

ATOMIC FORCE MICROSCOPY; DENSITY FUNCTIONAL THEORY; ELECTRIC POTENTIAL; ELECTRONICS INDUSTRY; FIELD EFFECT TRANSISTOR; HIGH TEMPERATURE; INTEGRATED CIRCUIT; LOW TEMPERATURE; PRIORITY JOURNAL; REVIEW; ROOM TEMPERATURE; SEMICONDUCTOR; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84920846601     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.207     Document Type: Review

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