Band-to-band tunneling in carbon nanotube field-effect transistors

Physical Review Letters

Volumn 93, Issue 19, 2004, Pages

  Appenzeller, J ^a   Lin, Y M ^a   Knoch, J ^b   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDPASS FILTERS; CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; GATES (TRANSISTOR); LASER ABLATION; OXIDATION; SCANNING ELECTRON MICROSCOPY; SWITCHING; THERMAL EFFECTS;

BAND-TO-BAND (BTB) TUNNELING; CARBON NANOTUBE FIELD-EFFECT TRASISTORS (CNFET); CONDUCTION BANDS; VALENCE BANDS;

MESFET DEVICES;

EID: 19744366972     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.196805     Document Type: Article

References (16)

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8. 3 backgated CNFET was first presented by Bachtold et al. [Science 294, 1317 (2001)].
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12. Javey et al. [Nano Lett. 4, 447 (2004).] recently reported transport measurements on devices that, at first glance, resemble those used here. However, these devices are around 5 times longer than ours, making them operate in the diffusive transport regime, and are based on rather small band gap tubes, preventing the observation of extremely small device off currents as necessary for the experiments presented here.
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