Vertical graphene base transistor

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 691-693

  Mehr, Wolfgang ^a   Dabrowski, Jarek ^a   Scheytt, J Christoph ^a   Lippert, Gunther ^a   Xie, Ya Hong ^b   Lemme, Max C ^c   Ostling, Mikael ^c   Lupina, Grzegorz ^a  

^a IHP   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Graphene; Hot electron transistor (HET); Radio frequency (RF)

Indexed keywords

HIGH CURRENT GAIN; HIGH CURRENTS; HIGH FREQUENCY OPERATION; HOT-ELECTRON TRANSISTOR (HET); ON/OFF RATIO; PROCESS LINE; RADIO FREQUENCIES; SMALL SIGNAL MODEL; SPECIFIC MATERIALS; TERA HERTZ;

COMPUTER SIMULATION; HETEROJUNCTION BIPOLAR TRANSISTORS;

GRAPHENE;

EID: 84860383292     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2189193     Document Type: Article

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