Impact of graphene interface quality on contact resistance and RF device performance

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1008-1010

  Hsu, Allen ^a   Wang, Han ^a   Kim, Ki Kang ^a   Kong, Jing ^a   Palacios, Tomás ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

Chemical vapor deposition (CVD) graphene; contact resistance; radio frequency (RF); thin film transistors

Indexed keywords

DE-EMBEDDING; DIRECT-CURRENT; GRAPHENE TRANSISTORS; HIGH FREQUENCY HF; INTERFACE QUALITY; PAD CAPACITANCE; RADIO FREQUENCY (RF); RADIO-FREQUENCY DEVICES; RF DEVICES; SACRIFICIAL LAYER; SILICON SUBSTRATES;

CONTACT RESISTANCE; CUTOFF FREQUENCY; ELECTRIC CONTACTORS; GRAPHENE; HIGH ELECTRON MOBILITY TRANSISTORS; IMPACT RESISTANCE; OHMIC CONTACTS; SURFACE ROUGHNESS; THIN FILM TRANSISTORS;

CHEMICAL VAPOR DEPOSITION;

EID: 79960926454     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2155024     Document Type: Article

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