Performance limits of monolayer transition metal dichalcogenide transistors

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 3042-3047

  Liu, Leitao ^a   Kumar, S Bala ^a   Ouyang, Yijian ^a   Guo, Jing ^a  

^a University of Florida   (United States)

Author keywords

2 D transition metal dichalcogenide (MX2); Ab initio theory; ballistic transport; band structure calculation; new direct gap semiconductor

Indexed keywords

AB INITIO THEORY; BALLISTIC TRANSPORT; BAND STRUCTURE CALCULATION; DIRECT-GAP SEMICONDUCTOR; TRANSITION METAL DICHALCOGENIDES;

BALLISTICS; BAND STRUCTURE; CALCULATIONS; MONOLAYERS; NANOELECTRONICS; TRANSITION METALS;

TRANSISTORS;

EID: 80052090759     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2159221     Document Type: Article

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31. 2," Phys. Rev. B, to be published.