Modeling of 10-nm-scale ballistic MOSFET's

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 242-244

  Naveh, Y ^a   Likharev, K K ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); LOGIC DEVICES; NUMERICAL METHODS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

BALLISTIC TRANSPORT; QUANTUM TUNNELING; TUNNEL TRANSISTORS; ULTRATHIN UNDOPED CHANNEL;

MOSFET DEVICES;

EID: 0033747807     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841309     Document Type: Article

References (14)

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