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Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

Single-particle tunneling in doped graphene-insulator-graphene junctions

(3) Feenstra, R M a Jena, Debdeep b Gu, Gong c

a CARNEGIE MELLON UNIVERSITY (United States)

b UNIVERSITY OF NOTRE DAME (United States)

c University of Tennessee Knoxville (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT PEAK; DIRAC POINT; ROTATIONAL ALIGNMENT; SINGLE-PARTICLE; SINGLE-PARTICLE TUNNELING; STRUCTURAL PERFECTION; TUNNEL CURRENTS; VOLTAGE BIAS;

GRAPHITE ELECTRODES; PHOSPHORUS;

GRAPHENE;

EID: 84857870146 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3686639 Document Type: Article

Times cited : (170)

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