Integrated Ring Oscillators based on high-performance Graphene Inverters

Scientific Reports

Volumn 3, Issue , 2013, Pages

  Schall, Daniel ^a   Otto, Martin ^a   Neumaier, Daniel ^a   Kurz, Heinrich ^a  

^a AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHITE;

CHEMISTRY; DEVICE FAILURE ANALYSIS; DEVICES; ELECTRIC CONDUCTIVITY; ELECTRODE; ELECTRONICS; EQUIPMENT DESIGN; MATERIALS TESTING; OSCILLOMETRY; SIGNAL PROCESSING; ARTICLE; EQUIPMENT; EQUIPMENT FAILURE;

ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MATERIALS TESTING; OSCILLOMETRY; SIGNAL PROCESSING, COMPUTER-ASSISTED;

EID: 84883780388     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep02592     Document Type: Article

References (31)

1. Novoselov, K. S. et al. Electric Field Effect in Atomically Thin Carbon Films. Science 306, 666 (2004).
2. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200 (2005). (Pubitemid 41599867)
3. Zhang, Y. B., Tan, Y. W., Stormer, H. L.&Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201-204 (2005). (Pubitemid 41599868)
4. Bolotin, K. S. et al. Ultrahigh electron mobility in suspended graphene. Solid State Commun. 146, 351 (2008).
5. Avouris, P. Graphene: Electronic and Photonic Properties and Devices. Nano Lett. 10, 4285 (2010).
6. Schwierz, F. Graphene transistors. Nat. Nano. 5, 487-496 (2010).
7. Nayfeh, O. M. Graphene Transistors on Mechanically Flexible Polyimide Incorporating Atomic-Layer-Deposited Gate Dielectric. IEEE Electron Device Lett. 32, 1349 (2011).
8. Sire, C. et al. Flexible gigahertz transistors derived from solution-based singlelayer graphene. Nano Lett. 12, 1184 (2012)
9. Petrone, N.,Meric, I., Hone, J. & Shepard, K. L. Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates. Nano Lett. 13, 121 (2013).
10. Liao, L. et al. High-speed graphene transistors with a self-aligned nanowire gate. Nature 467, 305 (2010).
11. Cheng, R. et al. High-frequency self-aligned graphene transistors with transferred gate stacks. PNAS 109, 11588 (2012).
12. Guerriero, F. et al. Graphene Audio Voltage Amplifier. Small 8, 357 (2012).
13. Wu, Y. et al. State-of-the-Art Graphene High-Frequency Electronics. Nano Lett. 12, 3062 (2012).
14. Traversi, F., Russo, V. & Sordan, R. Integrated complementary graphene inverter. Appl. Phys. Lett. 94, 223312 (2009).
15. Rizzi, L. G. et al. Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions. Nano Lett. 12, 3948 (2012).
16. Lin, Y.-M. et al. Wafer-Scale Graphene Integrated Circuit. Science 332, 1294 (2011).
17. Habibpour, O., Vukusic, J. & Stake, J. A 30-GHz Integrated Subharmonic Mixer Based on a Multichannel Graphene FET. IEEE Trans. on Microwave Theo. and Tech. 61, 841 (2013).
18. Guerriero, E. et al. Gigagertz Graphene Ring Oscillators. ACS Nano, 7, 5588-5594 (2013).
19. Sordan, R., Traversi, F. & Russo, V. Logic gates with a single graphene transistor. Appl. Phys. Lett. 94, 073305 (2009).
20. Lafikoti, M. et al. Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions. Nano Lett. 10, 1149-1153 (2010).
21. Kalon, G., Shin, Y. J., Truong, V. G., Kalitshov, A. & Yang, H. The role of charge traps in inducing hysteresis: Capacitance-voltage measurements on top gated bilayer graphene. Appl. Phys. Lett. 99, 083109 (2011).
22. Weste, N. H. E. & Harris, D. A. CMOS VLSI Design: A Circuits and Systems Perspective. Third Edition. Addison Wesley Pub Co Inc (2004).
23. International Technology Roadmap for Semiconductors (ITRS), 2011 Edition Report www.itrs.net, accessed Aug 8th 2013 (2013).
24. Han, S.-J. et al. High-Frequency Graphene Voltage Amplifier. Nano Lett. 11, 3690-3693 (2011).
25. Meric, I. et al. Channel Length Scaling in Graphene Field-Effect Transistors Studied with Pulsed Current-Voltage Measurements. Nano Lett. 11, 1093-1097 (2011).
26. Szafranek, B. N., Fiori, G., Schall, D., Neumaier, D. & Kurz, H. Current saturation and voltage gain in bilayer graphene field effect transistors. Nano Lett. 12, 1324-1328 (2012).
27. Li, X. et al. Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes. Nano Lett. 9, 4359-4363 (2009).
28. Kane, M. G. et al. 100 MHz CMOS Circuits using Sequential Laterally Solidified Silicon Thin-Film Transistors on Plastic. Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, 939 (2005).
29. Yin, H. et al. Bootstrapped ring oscillator with propagation delay time below 1.0 nsec/stage by standard 0.5 mm bottom-gate amorphous Ga2O3-In2O3-ZnO TFT technology. IEDM, 1-4 (2008).
30. Fix, W., Ullmann, A., Ficker, J. & Clemens, W. Fast polymer integrated circuits. Appl. Phys. Lett. 81, 1735-1737 (2002).
31. Ha, M. et al. Aerosol Jet Printed, Low Voltage, Electrolyte Gated Carbon Nanotube Ring Oscillators with Sub-5 ms Stage Delays. Nano Lett. 13, 954-960 (2013).