-
2
-
-
84869381567
-
-
Ed. CRC Press: Boca Raton.
-
Chen, W.-K., Ed. Logic Design; CRC Press: Boca Raton, 2003.
-
(2003)
Logic Design
-
-
Chen, W.-K.1
-
3
-
-
7444220645
-
Electric Field Effect in Atomically Thin Carbon Films
-
Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
-
(2004)
Science
, vol.306
, pp. 666-669
-
-
Novoselov, K.S.1
Geim, A.K.2
Morozov, S.V.3
Jiang, D.4
Zhang, Y.5
Dubonos, S.V.6
Grigorieva, I.V.7
Firsov, A.A.8
-
4
-
-
64649085838
-
High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
-
Hong, X.; Posadas, A.; Zou, K.; Ahn, C. H.; Zhu, J. High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides Phys. Rev. Lett. 2009, 102, 136808
-
(2009)
Phys. Rev. Lett.
, vol.102
, pp. 136808
-
-
Hong, X.1
Posadas, A.2
Zou, K.3
Ahn, C.H.4
Zhu, J.5
-
5
-
-
77957908617
-
Boron Nitride Substrates for High-Quality Graphene Electronics
-
Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 722-726
-
-
Dean, C.R.1
Young, A.F.2
Meric, I.3
Lee, C.4
Wang, L.5
Sorgenfrei, S.6
Watanabe, K.7
Taniguchi, T.8
Kim, P.9
Shepard, K.L.10
-
7
-
-
78650104679
-
A 204.8 GHz Static Divide-by-8 Frequency Divider in 250 nm InP HBT
-
Griffith, Z.; Urteaga, M.; Pierson, R.; Rowell, P.; Rodwell, M.; Brar, B. A 204.8 GHz Static Divide-by-8 Frequency Divider in 250 nm InP HBT; Proceedings of the 32nd IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). Monterey, CA, USA, Oct 3-6, 2010; pp 1-4.
-
(2010)
Proceedings of the 32nd IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). Monterey, CA, USA, Oct 3-6-4
, pp. 1
-
-
Griffith, Z.1
Urteaga, M.2
Pierson, R.3
Rowell, P.4
Rodwell, M.5
Brar, B.6
-
9
-
-
84864652610
-
Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions
-
Rizzi, L. G.; Bianchi, M.; Behnam, A.; Carrion, E.; Guerriero, E.; Polloni, L.; Pop, E.; Sordan, R. Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions Nano Lett. 2012, 12, 3948-3953
-
(2012)
Nano Lett.
, vol.12
, pp. 3948-3953
-
-
Rizzi, L.G.1
Bianchi, M.2
Behnam, A.3
Carrion, E.4
Guerriero, E.5
Polloni, L.6
Pop, E.7
Sordan, R.8
-
10
-
-
84862277776
-
State-of-the-Art Graphene High-Frequency Electronics
-
Wu, Y.; Jenkins, K. A.; Valdes-Garcia, A.; Farmer, D. B.; Zhu, Y.; Bol, A. A.; Dimitrakopoulos, C.; Zhu, W.; Xia, F.; Avouris, P. et al. State-of-the-Art Graphene High-Frequency Electronics Nano Lett. 2012, 12, 3062-3067
-
(2012)
Nano Lett.
, vol.12
, pp. 3062-3067
-
-
Wu, Y.1
Jenkins, K.A.2
Valdes-Garcia, A.3
Farmer, D.B.4
Zhu, Y.5
Bol, A.A.6
Dimitrakopoulos, C.7
Zhu, W.8
Xia, F.9
Avouris, P.10
-
11
-
-
80052799190
-
High-Frequency Graphene Voltage Amplifier
-
Han, S.-J.; Jenkins, K. A.; Garcia, A. V.; Franklin, A. D.; Bol, A. A.; Haensch, W. High-Frequency Graphene Voltage Amplifier Nano Lett. 2011, 11, 3690-3693
-
(2011)
Nano Lett.
, vol.11
, pp. 3690-3693
-
-
Han, S.-J.1
Jenkins, K.A.2
Garcia, A.V.3
Franklin, A.D.4
Bol, A.A.5
Haensch, W.6
-
12
-
-
84856519900
-
Graphene Audio Voltage Amplifier
-
Guerriero, E.; Polloni, L.; Rizzi, L. G.; Bianchi, M.; Mondello, G.; Sordan, R. Graphene Audio Voltage Amplifier Small 2012, 8, 357-361
-
(2012)
Small
, vol.8
, pp. 357-361
-
-
Guerriero, E.1
Polloni, L.2
Rizzi, L.G.3
Bianchi, M.4
Mondello, G.5
Sordan, R.6
-
13
-
-
33144475038
-
Ring Oscillators for CMOS Process Tuning and Variability Control
-
Bhushan, M.; Gattiker, A.; Ketchen, M.; Das, K. Ring Oscillators for CMOS Process Tuning and Variability Control IEEE Trans. Semicond. Manuf. 2006, 19, 10-18
-
(2006)
IEEE Trans. Semicond. Manuf.
, vol.19
, pp. 10-18
-
-
Bhushan, M.1
Gattiker, A.2
Ketchen, M.3
Das, K.4
-
14
-
-
0035834444
-
Logic Circuits with Carbon Nanotube Transistors
-
Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. Logic Circuits with Carbon Nanotube Transistors Science 2001, 294, 1317-1320
-
(2001)
Science
, vol.294
, pp. 1317-1320
-
-
Bachtold, A.1
Hadley, P.2
Nakanishi, T.3
Dekker, C.4
-
15
-
-
33645223262
-
An Integrated Logic Circuit Assembled on a Single Carbon Nanotube
-
Chen, Z.; Appenzeller, J.; Lin, Y.-M.; Sippel-Oakley, J.; Rinzler, A. G.; Tang, J.; Wind, S. J.; Solomon, P. M.; Avouris, P. An Integrated Logic Circuit Assembled on a Single Carbon Nanotube Science 2006, 311, 1735
-
(2006)
Science
, vol.311
, pp. 1735
-
-
Chen, Z.1
Appenzeller, J.2
Lin, Y.-M.3
Sippel-Oakley, J.4
Rinzler, A.G.5
Tang, J.6
Wind, S.J.7
Solomon, P.M.8
Avouris, P.9
-
16
-
-
84866027034
-
2 Transistors
-
2 Transistors Nano Lett. 2012, 12, 4674-4680
-
(2012)
Nano Lett.
, vol.12
, pp. 4674-4680
-
-
Wang, H.1
Yu, L.2
Lee, Y.-H.3
Shi, Y.4
Hsu, A.5
Chin, M.L.6
Li, L.-J.7
Dubey, M.8
Kong, J.9
Palacios, T.10
-
17
-
-
66749119012
-
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
-
Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E. et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 2009, 324, 1312-1314
-
(2009)
Science
, vol.324
, pp. 1312-1314
-
-
Li, X.1
Cai, W.2
An, J.3
Kim, S.4
Nah, J.5
Yang, D.6
Piner, R.7
Velamakanni, A.8
Jung, I.9
Tutuc, E.10
-
18
-
-
77956430820
-
Roll-to-Roll Production of 30-Inch Graphene Films for Transparent Electrodes
-
Bae, S.; Kim, H.; Lee, Y.; Xu, X.; Park, J.-S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H. R.; Song, Y. I. et al. Roll-to-Roll Production of 30-Inch Graphene Films for Transparent Electrodes Nat. Nanotechnol. 2010, 5, 574-578
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 574-578
-
-
Bae, S.1
Kim, H.2
Lee, Y.3
Xu, X.4
Park, J.-S.5
Zheng, Y.6
Balakrishnan, J.7
Lei, T.8
Kim, H.R.9
Song, Y.I.10
-
19
-
-
80755142865
-
Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition
-
Wood, J. D.; Schmucker, S. W.; Lyons, A. S.; Pop, E.; Lyding, J. W. Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition Nano Lett. 2011, 11, 4547-4554
-
(2011)
Nano Lett.
, vol.11
, pp. 4547-4554
-
-
Wood, J.D.1
Schmucker, S.W.2
Lyons, A.S.3
Pop, E.4
Lyding, J.W.5
-
20
-
-
66749097689
-
Integrated Complementary Graphene Inverter
-
Traversi, F.; Russo, V.; Sordan, R. Integrated Complementary Graphene Inverter Appl. Phys. Lett. 2009, 94, 223312
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 223312
-
-
Traversi, F.1
Russo, V.2
Sordan, R.3
-
21
-
-
77955333641
-
Low Operating Bias and Matched Input-Output Characteristics in Graphene Logic Inverters
-
Li, S.-L.; Miyazaki, H.; Kumatani, A.; Kanda, A.; Tsukagoshi, K. Low Operating Bias and Matched Input-Output Characteristics in Graphene Logic Inverters Nano Lett. 2010, 10, 2357-2362
-
(2010)
Nano Lett.
, vol.10
, pp. 2357-2362
-
-
Li, S.-L.1
Miyazaki, H.2
Kumatani, A.3
Kanda, A.4
Tsukagoshi, K.5
-
22
-
-
60749112055
-
Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping
-
Liu, L.; Ryu, S.; Tomasik, M. R.; Stolyarova, E.; Jung, N.; Hybertsen, M. S.; Steigerwald, M. L.; Brus, L. E.; Flynn, G. W. Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping Nano Lett. 2008, 8, 1965-1970
-
(2008)
Nano Lett.
, vol.8
, pp. 1965-1970
-
-
Liu, L.1
Ryu, S.2
Tomasik, M.R.3
Stolyarova, E.4
Jung, N.5
Hybertsen, M.S.6
Steigerwald, M.L.7
Brus, L.E.8
Flynn, G.W.9
-
24
-
-
33947111409
-
Evolution of Substrate Noise Generation Mechanisms with CMOS Technology Scaling
-
Badaroglu, M.; Wambacq, P.; Van der Plas, G.; Donnay, S.; Gielen, G.; De Man, H. Evolution of Substrate Noise Generation Mechanisms with CMOS Technology Scaling IEEE Trans. Circuits Syst. I 2006, 53, 296-305
-
(2006)
IEEE Trans. Circuits Syst. i
, vol.53
, pp. 296-305
-
-
Badaroglu, M.1
Wambacq, P.2
Van Der Plas, G.3
Donnay, S.4
Gielen, G.5
De Man, H.6
-
26
-
-
77956173102
-
Graphene-Based Ambipolar RF Mixers
-
Hsu, A.; Wang, H.; Wu, J.; Kong, J.; Palacios, T. Graphene-Based Ambipolar RF Mixers IEEE Electron Device Lett. 2010, 31, 906-908
-
(2010)
IEEE Electron Device Lett.
, vol.31
, pp. 906-908
-
-
Hsu, A.1
Wang, H.2
Wu, J.3
Kong, J.4
Palacios, T.5
-
27
-
-
79958719398
-
Wafer-Scale Graphene Integrated Circuit
-
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Meric, I.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A.; Avouris, P. et al. Wafer-Scale Graphene Integrated Circuit Science 2011, 332, 1294-1297
-
(2011)
Science
, vol.332
, pp. 1294-1297
-
-
Lin, Y.-M.1
Valdes-Garcia, A.2
Han, S.-J.3
Farmer, D.B.4
Meric, I.5
Sun, Y.6
Wu, Y.7
Dimitrakopoulos, C.8
Grill, A.9
Avouris, P.10
-
28
-
-
84874657266
-
Graphene FETs for Zero-Bias Linear Resistive FET Mixers
-
Moon, J.; Seo, H.-C.; Antcliffe, M.; Le, D.; McGuire, C.; Schmitz, A.; Nyakiti, L.; Gaskill, D.; Campbell, P.; Lee, K.-M. et al. Graphene FETs for Zero-Bias Linear Resistive FET Mixers IEEE Electron Device Lett. 2013, 34, 465-467
-
(2013)
IEEE Electron Device Lett.
, vol.34
, pp. 465-467
-
-
Moon, J.1
Seo, H.-C.2
Antcliffe, M.3
Le, D.4
McGuire, C.5
Schmitz, A.6
Nyakiti, L.7
Gaskill, D.8
Campbell, P.9
Lee, K.-M.10
-
29
-
-
84655166979
-
A Subharmonic Graphene FET Mixer
-
Habibpour, O.; Cherednichenko, S.; Vukusic, J.; Yhland, K.; Stake, J. A Subharmonic Graphene FET Mixer IEEE Electron Device Lett. 2012, 33, 71-73
-
(2012)
IEEE Electron Device Lett.
, vol.33
, pp. 71-73
-
-
Habibpour, O.1
Cherednichenko, S.2
Vukusic, J.3
Yhland, K.4
Stake, J.5
-
30
-
-
84876122244
-
A 22nm SoC Platform Technology Featuring 3-D Tri-gate and High-k/Metal Gate, Optimized for Ultra Low Power, High Performance and High Density SoC Applications
-
Jan, C.-H.; Bhattacharya, U.; Brain, R.; Choi, S.-J.; Curello, G.; Gupta, G.; Hafez, W.; Jang, M.; Kang, M.; Komeyli, K. et al. A 22nm SoC Platform Technology Featuring 3-D Tri-gate and High-k/Metal Gate, Optimized for Ultra Low Power, High Performance and High Density SoC Applications; Proceedings of the IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA, 2012; pp 3.1.1-3.1.4.
-
(2012)
Proceedings of the IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA-3.1.4
, pp. 311
-
-
Jan, C.-H.1
Bhattacharya, U.2
Brain, R.3
Choi, S.-J.4
Curello, G.5
Gupta, G.6
Hafez, W.7
Jang, M.8
Kang, M.9
Komeyli, K.10
-
31
-
-
84878790922
-
CMOS Leakage and Power Reduction in Transistors and Circuits: Process and Layout Considerations
-
Shauly, E. N. CMOS Leakage and Power Reduction in Transistors and Circuits: Process and Layout Considerations J. Low Power Electron. Appl. 2012, 2, 1-29
-
(2012)
J. Low Power Electron. Appl.
, vol.2
, pp. 1-29
-
-
Shauly, E.N.1
-
33
-
-
77958598550
-
InP HBT Demultiplexing ICs for over 100 Gb/s Optical Transmission
-
Konczykowska, A.; Jorge, F.; Dupuy, J.-Y.; Riet, M.; Godin, J.; Scavennec, A.; Bach, H.-G.; Mekonnen, G. G.; Pech, D.; Schubert, C. InP HBT Demultiplexing ICs for over 100 Gb/s Optical Transmission; Proceedings of the 18th International Conference on Microwave Radar and Wireless Communications (MIKON). Vilnius, Lithuania, June 14-16, 2010; pp 1-4.
-
(2010)
Proceedings of the 18th International Conference on Microwave Radar and Wireless Communications (MIKON). Vilnius, Lithuania, June 14-16-4
, pp. 1
-
-
Konczykowska, A.1
Jorge, F.2
Dupuy, J.-Y.3
Riet, M.4
Godin, J.5
Scavennec, A.6
Bach, H.-G.7
Mekonnen, G.G.8
Pech, D.9
Schubert, C.10
-
34
-
-
80052904744
-
Carry Chains for Ultra High-Speed SiGe HBT Adders
-
Gutin, A.; Jacob, P.; Chu, M.; Belemjian, P.; LeRoy, M.; Kraft, R.; McDonald, J. Carry Chains for Ultra High-Speed SiGe HBT Adders IEEE Trans. Circuits Syst. 2011, 58, 2201-2210
-
(2011)
IEEE Trans. Circuits Syst.
, vol.58
, pp. 2201-2210
-
-
Gutin, A.1
Jacob, P.2
Chu, M.3
Belemjian, P.4
Leroy, M.5
Kraft, R.6
McDonald, J.7
-
35
-
-
80052339891
-
Fully integrated 50 Gbit/s half-rate linear phase detector in SiGe BiCMOS
-
Joram, N.; Barghouthi, A.; Knochenhauer, C.; Ellinger, F.; Scheytt, C. Fully integrated 50 Gbit/s half-rate linear phase detector in SiGe BiCMOS.; Proceedings of the IEEE MTT-S International Microwave Symposium (IMS2011). Baltimore, MD, USA, June 5-10, 2011; pp 1-4.
-
(2011)
Proceedings of the IEEE MTT-S International Microwave Symposium (IMS2011). Baltimore, MD, USA, June 5-10-4
, pp. 1
-
-
Joram, N.1
Barghouthi, A.2
Knochenhauer, C.3
Ellinger, F.4
Scheytt, C.5
-
36
-
-
84879684059
-
Opportunities and Challenges of III-V Nanoelectronics for Future High-Speed, Low-Power Logic Applications
-
Chau, R.; Datta, S.; Majumdar, A. Opportunities and Challenges of III-V Nanoelectronics for Future High-Speed, Low-Power Logic Applications; Proceedings of the 27th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). Palm Springs, CA, USA, Oct 30-Nov 2, 2005; p 4.
-
(2005)
Proceedings of the 27th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). Palm Springs, CA, USA, Oct 30-Nov 2
, pp. 4
-
-
Chau, R.1
Datta, S.2
Majumdar, A.3
-
38
-
-
84861090242
-
Graphene Electronics for RF Applications
-
Wang, H.; Hsu, A. L.; Palacios, T. Graphene Electronics for RF Applications IEEE Microwave Mag. 2012, 13, 114-125
-
(2012)
IEEE Microwave Mag.
, vol.13
, pp. 114-125
-
-
Wang, H.1
Hsu, A.L.2
Palacios, T.3
-
39
-
-
38549085884
-
Gate-Induced Insulating State in Bilayer Graphene Devices
-
Oostinga, J. B.; Heersche, H. B.; Liu, X.; Morpurgo, A. F.; Vandersypen, L. M. K. Gate-Induced Insulating State in Bilayer Graphene Devices Nat. Mater. 2007, 7, 151-157
-
(2007)
Nat. Mater.
, vol.7
, pp. 151-157
-
-
Oostinga, J.B.1
Heersche, H.B.2
Liu, X.3
Morpurgo, A.F.4
Vandersypen, L.M.K.5
-
40
-
-
67149121054
-
Direct Observation of a Widely Tunable Bandgap in Bilayer Graphene
-
Zhang, Y.; Tang, T.-T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct Observation of a Widely Tunable Bandgap in Bilayer Graphene Nature 2009, 459, 820-823
-
(2009)
Nature
, vol.459
, pp. 820-823
-
-
Zhang, Y.1
Tang, T.-T.2
Girit, C.3
Hao, Z.4
Martin, M.C.5
Zettl, A.6
Crommie, M.F.7
Shen, Y.R.8
Wang, F.9
-
41
-
-
79958004324
-
Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
-
Li, S.-L.; Miyazaki, H.; Hiura, H.; Liu, C.; Tsukagoshi, K. Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels ACS Nano 2011, 5, 500-506
-
(2011)
ACS Nano
, vol.5
, pp. 500-506
-
-
Li, S.-L.1
Miyazaki, H.2
Hiura, H.3
Liu, C.4
Tsukagoshi, K.5
-
42
-
-
84858233159
-
Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors
-
Szafranek, B. N.; Fiori, G.; Schall, D.; Neumaier, D.; Kurz, H. Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors Nano Lett. 2012, 12, 1324-1328
-
(2012)
Nano Lett.
, vol.12
, pp. 1324
-
-
Szafranek, B.N.1
Fiori, G.2
Schall, D.3
Neumaier, D.4
Kurz, H.5
|