Single-layer MoS2 transistors

Nature Nanotechnology

Volumn 6, Issue 3, 2011, Pages 147-150

  Radisavljevic, B ^a   Radenovic, A ^a   Brivio, J ^a   Giacometti, V ^a   Kis, A ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; ENERGY HARVESTING; GATE DIELECTRICS; GRAPHENE; GRAPHENE TRANSISTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; NANORIBBONS; STRAINED SILICON;

LOWER-POWER CONSUMPTION; NANOELECTRONIC DEVICES; ONE-DIMENSIONAL MATERIALS; OXIDE GATE DIELECTRICS; STANDBY-POWER DISSIPATION; STRAINED SILICON FILMS; TRANSPARENT SEMICONDUCTOR; TWO-DIMENSIONAL MATERIALS;

TRANSISTORS;

DISULFIDE; GRAPHENE; MOLYBDENUM; SILICON; CARBON NANOTUBE; GRAPHITE; MOLYBDENUM DISULFIDE; NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; DIELECTRIC CONSTANT; ENERGY; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; ATOMIC FORCE MICROSCOPY; CHEMISTRY; EQUIPMENT DESIGN; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SURFACE PROPERTY; TEMPERATURE;

DISULFIDES; EQUIPMENT DESIGN; GRAPHITE; MICROSCOPY, ATOMIC FORCE; MOLYBDENUM; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES, CARBON; SEMICONDUCTORS; SILICON; SILICON DIOXIDE; SURFACE PROPERTIES; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 79952406873     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2010.279     Document Type: Article

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