Field-effect tunneling transistor based on vertical graphene heterostructures

Science

Volumn 335, Issue 6071, 2012, Pages 947-950

  Britnell, L ^a   Gorbachev, R V ^a   Jalil, R ^a   Belle, B D ^a   Schedin, F ^a   Mishchenko, A ^a   Georgiou, T ^a   Katsnelson, M I ^b   Eaves, L ^c   Morozov, S V ^d   Peres, N M R ^e,f   Leist, J ^g   Geim, A K ^a   Novoselov, K S ^a   Ponomarenko, L A ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^e UNIVERSITY OF MINHO   (Portugal)

^f NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^g Momentive Performance Materials   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE NANOTUBE; DISULFIDE; GRAPHENE; MOLYBDENUM; NANORIBBON;

ALKENE; DISSIPATION; ELECTRONIC EQUIPMENT; FREQUENCY ANALYSIS; SILICON; SULFIDE; TEMPERATURE EFFECT;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); DEVICES; ELECTRIC POTENTIAL; ENERGY; FIELD EFFECT TRANSISTOR; NANOANALYSIS; NANOENCAPSULATION; PRIORITY JOURNAL; QUANTUM CHEMISTRY; ROOM TEMPERATURE; STRUCTURE ANALYSIS; THICKNESS; TRANSPORT KINETICS;

EID: 84857567921     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1218461     Document Type: Article

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