Benchmarking transition metal dichalcogenide MOSFET in the ultimate physical scaling limit

IEEE Electron Device Letters

Volumn 35, Issue 3, 2014, Pages 402-404

  Majumdar, Kausik ^a   Hobbs, Chris ^a   Kirsch, Paul D ^a  

^a SEMATECH   (United States)

Author keywords

2D material; MOSFET; performance benchmarking; Scaling

Indexed keywords

ENERGY EFFICIENCY; MOSFET DEVICES; TRANSITION METALS;

BALLISTIC PERFORMANCE; ELECTROSTATIC INTEGRITY; MOS-FET; NON-EQUILIBRIUM GREENS FUNCTIONS; OFF-STATE CURRENT; PERFORMANCE BENCHMARKING; SCALING; TRANSITION METAL DICHALCOGENIDES;

BENCHMARKING;

EID: 84895930900     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2300013     Document Type: Article

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