Boron nitride substrates for high-quality graphene electronics

Nature Nanotechnology

Volumn 5, Issue 10, 2010, Pages 722-726

  Dean, C R ^a   Young, A F ^a   Meric, I ^a   Lee, C ^b,c   Wang, L ^a   Sorgenfrei, S ^a   Watanabe, K ^d   Taniguchi, T ^d   Kim, P ^a   Shepard, K L ^a   Hone, J ^a  

^a Columbia University ^*  (United States)

^b Sungkyunkwan University   (South Korea)

^c Sungkyunkwan University   (South Korea)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; CARRIER MOBILITY; DANGLING BONDS; GRAPHENE; GRAPHENE DEVICES; III-V SEMICONDUCTORS; NITRIDES; OPTICAL LATTICES; SILICA; SINGLE CRYSTALS;

ATOMICALLY SMOOTH SURFACE; DEVICE ARCHITECTURES; FABRICATION AND CHARACTERIZATIONS; HEXAGONAL BORON NITRIDE (H-BN); INTRINSIC DOPING; INTRINSIC PROPERTY; LAYERED MATERIAL; OPTICAL PHONON MODES;

SUBSTRATES;

BORON DERIVATIVE; BORON NITRIDE; GRAPHENE; GRAPHITE; SILICON DIOXIDE; UNCLASSIFIED DRUG;

ARTICLE; DEVICE; ELECTRICAL PARAMETERS; ELECTRONICS; MECHANICS; NANOFABRICATION; PRIORITY JOURNAL; QUALITY CONTROL; SURFACE PROPERTY; TRANSPORT KINETICS;

EID: 77957908617     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2010.172     Document Type: Article

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