Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

Nano Letters

Volumn 13, Issue 1, 2013, Pages 121-125

  Petrone, Nicholas ^a   Meric, Inanc ^a   Hone, James ^a   Shepard, Kenneth L ^a  

^a Columbia University ^*  (United States)

Author keywords

CVD; FET; flexible; Graphene; radio frequency

Indexed keywords

ELECTRONIC PERFORMANCE; ELECTRONIC TECHNOLOGIES; FET; FLEXIBLE; FLEXIBLE SUBSTRATE; HIGH FLEXIBILITY; POWER GAINS; RADIO FREQUENCIES; STRAIN LEVELS; STRAIN LIMIT;

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS;

GRAPHENE;

EID: 84872102690     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303666m     Document Type: Article

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