Double-gate strained-ge heterostructure tunneling FET (TFET) with record high drive currents and <60mV/dec subthreshold slope

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Krishnamohan, Tejas ^a,b   Kim, Donghyun ^a   Raghunathan, Shyam ^a   Saraswat, Krishna ^a  

^a STANFORD UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; AMBIPOLAR BEHAVIORS; BANDSTRUCTURE; DG STRUCTURES; DOUBLE GATES; DRAIN DOPING; HETEROSTRUCTURE; HIGH DRIVE CURRENTS; NON LOCALS; OFF CURRENTS; ON CURRENTS; QUANTUM TRANSPORT MODELS; SMALL BANDGAP; STRAINED-GE; SUB THRESHOLD SLOPES; TUNNEL FETS; TUNNELING FETS;

ELECTRON DEVICES; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALERKIN METHODS; GERMANIUM; MESFET DEVICES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SCALABILITY;

MOSFET DEVICES;

EID: 64549108830     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796839     Document Type: Conference Paper

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