Epitaxial growth of single-domain graphene on hexagonal boron nitride

Nature Materials

Volumn 12, Issue 9, 2013, Pages 792-797

  Yang, Wei ^a   Chen, Guorui ^b   Shi, Zhiwen ^a   Liu, Cheng Cheng ^a,c   Zhang, Lianchang ^a,d   Xie, Guibai ^a   Cheng, Meng ^a   Wang, Duoming ^a   Yang, Rong ^a   Shi, Dongxia ^a   Watanabe, Kenji ^e   Taniguchi, Takashi ^e   Yao, Yugui ^c   Zhang, Yuanbo ^b   Zhang, Guangyu ^a  

^a INSTITUTE OF PHYSICS   (China)

^b FUDAN UNIVERSITY   (China)

^c BEIJING INSTITUTE OF TECHNOLOGY   (China)

^d KUNMING UNIVERSITY   (China)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON NITRIDE; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; PHOTONIC BAND GAP; QUANTUM HALL EFFECT; SUBSTRATES; SUPERLATTICES;

ATOMICALLY FLAT SURFACE; DIFFERENT SUBSTRATES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); PLASMA ASSISTED DEPOSITION; STACKING ORIENTATION; STRUCTURAL UNCERTAINTY; TWO-DIMENSIONAL (2D) SUPERLATTICES;

GRAPHENE;

BORON DERIVATIVE; BORON NITRIDE; GRAPHITE; NANOMATERIAL;

ATOMIC FORCE MICROSCOPY; CHEMISTRY; SURFACE PROPERTY; ARTICLE;

BORON COMPOUNDS; GRAPHITE; MICROSCOPY, ATOMIC FORCE; NANOSTRUCTURES; SURFACE PROPERTIES;

EID: 84883171868     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3695     Document Type: Article

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